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| inchange semiconductor product specification silicon pnp power transistors BDX18 description ? with to-3 package ? high switching speed applications ? lf large signal power amplification ? suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -15 a i b base current -7 a p t total power dissipation t c =25 ?? 117 w t j junction temperature -65~200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.5 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors BDX18 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.2a ; i b =0 -60 v v (br) ebo emitter-base breakdown voltage i e =-1ma ; i c =0 -7 v v cesat collector-emitter saturation voltage i c =-4a ;i b =-0.4a -1.1 v v be base-emitter voltage i c =-4a;v ce =-4v -1.8 v i cex collector cut-off current v ce =-90v;v be =1.5v v ce =-60v;v be =1.5v;t c =150 ?? -5 -10 ma i ebo emitter cut-off current v eb =-7v; i c =0 -5 ma h fe dc current gain i c =-4a ; v ce =-4v 20 70 f t transition frequency i c =-1a ; v ce =-10v;f=1mhz 4 mhz inchange semiconductor product specification 3 silicon pnp power transistors BDX18 package outline fig.2 outline dimensions |
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